Hall effect
It is important for identify the nature of charge carrier in a material. This effect is used to define weather a given sample is of P type or N type.
When a magnetic field is applied perpendicular to current carrying conductor then a voltage is developed in material perpendicular to the both magnetic field and current this effect is known as hall effect and the voltage developed is known as hall voltage.
Let us consider a rectangular block of an extrinsic semiconductor in which current is flowing along x-axis and the magnetic field is applied along z Axis suppose the extrinsic semiconductor is of N type hence the majority career is electron then
charge = ne
where n is concentration of electron.
Hence electron is drifting toward negative access and a electron is moving in magnetic field and hands it experience is Lawrence force.
Lorez force Experienced by a charge = BeVd
Where Vd Is drift velocity of the carrier.
The direction of force can be determined by Fleming left hand rule.
Here the Lawrence force is exerted on the conductor in negative Y direction.
Due to this Lawrence force, more and more career deposited on the bottom surface of semiconductor. This deposition will continue till the repulsive force due to accumulated charge balances the Lawrence force.
After sometimes applied voltage and repulsive force both become equal and act at in opposite direction.
